InAs wafer ( Indium Arsenide )

We provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch . InAs crystal is a compound formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " InAs products with wide choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .

III-V Compound Wafer

We provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer .

Electrical and Doping Specification

Product Specification

Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007.

Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide services for the manufacture, repair and renovation of special high-temperature equipment as well. In addition, our company provides services for R&D, analytical research within our specialization.

We have established contacts with the world’s leading and domestic manufacturers of ceramic and heating elements, leading industry institutes and track all the latest trends in this field.

The introduction of ceramic and heating elements in production requires a special study of each case, taking into account technological and market nuances. The specialists of our company have all the necessary experience for the most complete solution of the customer’s problem and developing an optimal offer.

Among our customers are chemical, petrochemical, oil refining, oil and gas, mining, mining and concentrating, paper, metallurgy, power, electrical, electronic, glass and other industries.

We will be glad to answer all your questions.