High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved
thermal and mechanical properties than similar products. On this
basis, the "L-shaped high thermal conductivity submerged heating
"Appliance" will bring revolutionary progress to aluminum
industrial equipment.
The high-temperature strength of silicon nitride ceramics is very
good, which ensures that the sealed tube can still be used for a
long time under frequent operating conditions.In view of the brittleness of silicon nitride ceramics, large
mechanical shocks should be avoided, so attention should be paid to
the design and installation of the lifting transmission device.
Advantage:
The high density, high strength and high thermal shock resistance
of silicon nitride ceramics determine that it is the best choice
for sealing tubes in low pressure die casting.
Compared with aluminum titanate and alumina ceramics, silicon
nitride has superior wear resistance, which can ensure the
airtightness of the sealed tube for a long time;
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|
Physical
Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 |
Mechanical
Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 |
Thermal
Property | Maximum working
temperature | °C | 1500 | 1600 | 1300 | 1400 |
thermal expansion
coefficient
0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) |
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 |
| 300°C) | 16 | 100 | 3 | 25 |
Electrical
Property | Resisting rate of Volume | ◎.cm | | | | |
| 20°C | >1012 | 106-108 | >1010 | >1011 |
| 100°C | 1012-1013 | – | – | >1011 |
| 300°C | >1012 | – | – | >1011 |
Insulation Breakdown
Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – |
