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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

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Brand Name :	ZG
Model Number :	MS
Certification :	CE
Price :	Negotiation
Payment Terms :	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :	10000 pieces per month
Delivery Time :	5-8 working days

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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

Silicon Carbide (SiC) Block

Silicon Carbide Block Good Thermal Conductivity Good Thermal Shock Resistance Good Abrasion Resistance

Due to our large output capacity and strong molding ability for customization production, our company has exported our products to many international markets. Our products are certified according to requirements of customers.

We continue to innovate, improve, and enhance as well as integrate the resources internally and externally to strengthen the flexibility of our company and the competitiveness of our products, and provide both old and new customers with best service.

Application:

Grinding process of semiconductor silicon wafer
Grinding process of LED sapphire wafer
Thinning process of LED wafer

Feature requirements:

Good thermal conductivity
Good thermal shock resistance
Good abrasion resistance

Performance	UNIT	HS-A	HS-P	HS-XA
Grain Size	μm	4-10	4-10	4-10
Density	g/cm	≥3.1	3.0-3.1	>3.1
Hardness (Knoop)	Kg/mm²	2800	2800	2800
Flexural Strength 4 pt @ RT	MPa*m1/2	385	240	420
Flexural Strength 4 pt @ RT	*10³1b/in²	55	55	55
Compressive Strength @ RT	Mpa	3900		3900
Compressive Strength @ RT	*10³1b/in²	560		560
Modulus of Elasticity @ RT	Gpa	410	400	410
Modulus of Elasticity @ RT	*10³1b/in²	59	58	59
Weibull Modulus (2 parameter)		8	19	12
Poisson Ratio		0.14	0.14	0.14
Fracture Toughness @ RT Double Torsion & SENB	MPa*m1/2	8	8	8
Fracture Toughness @ RT Double Torsion & SENB	*1³1b/in²in½	8	8	8
Coefficient of Thermal Expansion RT to 700℃	X10-6mm/mmK	4.02	4.2	4.02
Coefficient of Thermal Expansion RT to 700℃	X10-6 in/in°F	2.2	2.3	2.2
Maximum Service Temp.Air Mean Specific Heat @ RT	°C	1900	1900	1900
Maximum Service Temp.Air Mean Specific Heat @ RT	J/gmK	0.67	0.59	0.67
Thermal Conductivity @ RT	W/mK	125.6	110	125.6
Thermal Conductivity @ RT	Btu/ft h°F	72.6	64	72.6
@200°C	W/mK	102.6		102.6
@200°C	Btu/ft h°F	59.3		59.3
@400°C	W/mK	77.5		77.5
@400°C	Btu/ft h°F	44.8		44.8
Permeability @ RT to 1000°C	31MPa below No gas leakage
Electrical Resistivity @ RT	Ohm-cm	102-106	N/A	102-106
Emissivity		0.9	0.9	0.9

Why better than others:

Available in various specifications, also provide customized services
Stable quality and fast delivery
SiC block diameter from 120mm to 480mm in stock
Save time of sample loading and unloading process
Acceptable higher thinning rate

Silicon Carbide Block - SiC-Block-B-11

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